发明名称 |
Method for producing a semiconductor element |
摘要 |
A method for producing a semiconductor component, in particular a thin-film component, a semiconductor layer being separated from a substrate by irradiation with a laser beam having a plateaulike spatial beam profile. Furthermore, the semiconductor layer, prior to separation, is applied to a carrier with an adapted thermal expansion coefficient. The method is suitable in particular for semiconductor layers containing a nitride compound semiconductor. |
申请公布号 |
US7588998(B2) |
申请公布日期 |
2009.09.15 |
申请号 |
US20030503042 |
申请日期 |
2003.01.30 |
申请人 |
OSRAM OPTO SEMICONDUCTOR GMBH |
发明人 |
FEHRER MICHAEL;HAHN BERTHOLD;HAERLE VOLKER;KAISER STEPHAN;OTTE FRANK;PLOESSL ANDREAS |
分类号 |
B23K26/00;H01L21/30;B23K26/40;B23K101/40;C30B33/00;H01L21/20;H01L21/268;H01L21/762;H01L33/00;H01S5/323 |
主分类号 |
B23K26/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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