Method to create damage-free porous low-k dielectric films and structures resulting therefrom

摘要

Low dielectric constant dielectric films having a high degree of porosity suffer from poor mechanical strength and can be damaged during processing steps. Damage can be substantially eliminated or minimized by stuffing the pores of the dielectric film with a material that substantially fills the pores. The stuffing material should have low surface tension and viscosity to provide good wetting. Alternatively, the stuffing material can be dissolved in a wetting carrier fluid, such as supercritical carbon dioxide and the like.