| 摘要 |
<p>A thin film transistor, a manufacturing method thereof, a display device, and a manufacturing method thereof are provided to reduce process steps for the thin film transistor since there is no need a photo mask to form a gate electrode pattern. In a thin film transistor, a manufacturing method thereof, a display device, and a manufacturing method thereof, a light-shielding layer is formed and a first resist mask is formed on it. A part of the light-shielding layer is etched in order to form the light-shielding layer having a pattern. An underlayer(53) is formed on the light-shielding layer, and a first conductive film(102), a first insulating layer(104), a semiconductor film(106), an impurity semiconductor film(108) and a second conductive film(110) are laminated on the underlayer in order.</p> |
