| 摘要 |
<p>A method for measuring an overlay of a semiconductor is provided to measure a radius of curvature and measure an overlay by a certain radius of curvature as a whole one while being deposited on a metal layer, so preventing the degradation of overlay accuracy. In a method for measuring an overlay of a semiconductor, a metal layer(210) is deposited on the semiconductor substrate in which a circular overlay vernier is proved. A circle having the metal layer as an edge is divided into a plurality region and radius of curvature of each region is measured. One region is selected from a plurality of regions, and overlay vernier is measured by applying the selected radius of curvature to the whole overlay verniner. A metal layer comprises aluminum, and It asymmetrically or symmetrically is deposited on the metal layer.</p> |
