| 摘要 |
<p>A manufacturing method of a semiconductor device is provided to improve a coupling ratio and a gap fill by increasing the contact area of a floating gate and a control gate. In a manufacturing method of a semiconductor device, a first conductive film with a first thickness and a tunnel insulating layer(210) are laminated on the semiconductor substrate(200) in order. A first hard mask pattern(240a) is formed on the first conductive film, and a first conductive film exposed between the first hard mask pattern is etched by a second thickness thinner than first thickness is formed on the first conductive pattern. The first spacer(260) is formed on the sidewall of the first hard mask pattern and the top of the first conductive pattern.</p> |
