发明名称 CMOS IMAGE SENSOR
摘要 A cmos image sensor is provided to prevent the uniformity of photo diode property by forming a conductive line arranged on an active region in relation to a light block layer. In a cmos image sensor, a pixel array includes a first pixel obtaining an effective pixel and a second pixel which is not used as an effective pixel. A conductive line(220) consisting of at least one layer is arranged on a first conductive region. Light block layers(240,250) are arranged on a second conductive region in correspondence to the second pixel. A first pixel supplies a signal and outputs it through a conductive line(230) arranged on the second conductive line. The pixel array is composed of the effective region and an optical block region where the second pixel is arranged.
申请公布号 KR20090097000(A) 申请公布日期 2009.09.15
申请号 KR20080022138 申请日期 2008.03.10
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, SAE YOUNG;AHN, JUNG CHAK;KIM, YI TAE;LEE, KYUNG HO;JANG, YUN HO
分类号 H01L27/146 主分类号 H01L27/146
代理机构 代理人
主权项
地址