发明名称 |
Chamber clean method using remote and in situ plasma cleaning systems |
摘要 |
A process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber. According to one embodiment the process comprises performing a substrate processing operation on the substrate within the substrate processing chamber and then transferring the substrate out of the substrate processing chamber; flowing a first etchant gas into a remote plasma source, forming reactive species from the etchant gas and transporting the reactive species into the substrate processing chamber to remove a first portion of the unwanted deposition build-up; and thereafter, flowing a second etchant gas into the substrate processing chamber and forming a plasma within the substrate processing chamber from the second gas in order to remove a second portion of the unwanted deposition build-up.
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申请公布号 |
US7588036(B2) |
申请公布日期 |
2009.09.15 |
申请号 |
US20020187817 |
申请日期 |
2002.07.01 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
CUI ZHENJIANG;COX MICHAEL S.;LAI CANFENG;KRISHNARAJ PADDY |
分类号 |
B08B7/00;B08B7/04;C23C16/44 |
主分类号 |
B08B7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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