MESFETs integrated with MOSFETs on common substrate and methods of forming the same

摘要

An integrated circuit has first and second complementary MOSFETs and first and second complementary MESFETs fabricated on a common substrate. An insulating layer is disposed on the common substrate. The active region uses salicide block oxide layers to align the drain and source regions to the gate. Alternatively, the active region uses poly-silicon separators surrounded by side wall oxide spacers to align the drain and source regions to the gate. The MESFET may have a drift region between the gate terminal and drain region for high voltage applications. A "T"-shaped metal contact to the gate of the MESFETs reduces the gate length of the device