| 摘要 |
A programming method of a nonvolatile memory device is provided to uniformly control distribution of a threshold voltage of all memory cells by minimizing a disturbance phenomenon generated in a memory cell adjacent to a source selection transistor. A power voltage is applied to a drain selection line(610). A first voltage larger than the power voltage is applied to a common source line. A power voltage is applied to a source selection line(620). A set voltage is applied(630). A program operation is performed by applying a high voltage to each word line. In a step for applying the set voltage, the power voltage is applied to the source selection line after applying a first voltage. |
