| 摘要 |
The method of evaluating a semiconductor device having plural semiconductor elements comprised of an insulating film and an electrode on a semiconductor substrate including, dividing the surface of the semiconductor substrate into plural measurement regions comprising plural semiconductor elements, and in each of the measurement regions, applying current to the semiconductor elements comprised in the measurement region to conduct detections of dielectric breakdown of the insulating film that occurs by the application of current, wherein the current application is conducted in such a manner that the level of current flowing through the measurement region is constant through the current application as well as identical in each of the measurement regions.
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