| 摘要 |
It is made possible to easily set a protection voltage even when a semiconductor device to be protected includes a gate insulating film having a low dielectric breakdown voltage. A semiconductor device includes: a MOS transistor including a first gate insulating film provided on a first element region of first conductivity-type in a semiconductor, a first gate electrode provided on the first gate insulating film, and first impurity regions of second conductivity-type provided in the first element region on both sides of the first gate electrode; and an ESD protection element including a second gate insulating film provided on a second element region of first conductivity-type in the semiconductor substrate and having substantially the same thickness as the first gate insulating film, a second gate electrode provided on the second gate insulating film and connected to the first gate electrode, and second impurity regions of second conductivity-type provided in the second element region on both sides of the second gate electrode.
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