OPTOELECTRONIC LIGHT EMITTING STRUCTURE

摘要

A light emitting structure comprising a hot electron source and a layer of ptoelectronic material disposed thereon and optionally p-type material disposed on the optoelectronic material. For example, a light emitting structure that comprises, in order, a polycrystalline silicon layer, a silicon dioxide layer, a zinc oxide layer and an indium tin oxide (ITO) layer. When a sufficient voltage is applied across the layers, light is generated.