A laser activated phase change device for use in an integrated circuit comprises a chalcogenide fuse configured to connect a first patterned metal line and a second patterned metal line and positioned between an inter layer dielectric and an over fuse dielectric. The fuse interconnects active semiconductor elements manufactured on a substrate. A method for activating the laser activated phase change device includes selecting a laser condition of a laser based on characteristics of the fuse and programming a phase-change of the fuse with the laser by direct photon absorption until a threshold transition temperature is met.
申请公布号
WO2009088910(A3)
申请公布日期
2009.09.11
申请号
WO2008US88611
申请日期
2008.12.31
申请人
ELECTRO SCIENTIFIC INDUSTRIES, INC.;HOOPER, ANDY, E.;KAWASAKI, ALLEN;HAINSEY, ROBERT