SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD, AND ELECTRONIC DEVICE

摘要

The switching speed and other capabilities of a compound semiconductor device will be improved. Provided is a semiconductor substrate provided with a silicon substrate, an insulation film formed on the silicon substrate and having an aperture with an aspect ratio of /3 or higher, and that reaches the silicon substrate, a compound semiconductor crystal formed in the aperture and which is a seed compound semiconductor crystal formed such that it protrudes upward from the surface of the insulation film, and a laterally grown compound semiconductor layer that is laterally grown on the insulation film with a specific surface of the seed compound semiconductor crystal as the seed surface.