NONVOLATILE MEMORY DEVICE AND ITS MANUFACTURING METHOD

摘要

A nonvolatile memory device is characterized in that it comprises a substrate, a first electrode provided on the substrate, a second electrode provided above the first electrode so as to cross the first electrode, and a memory section provided between the first electrode and the second electrode and in that at least either of the area of a first memory section surface of the memory section opposite to the first electrode and the area of a second memory section surface of the memory section opposite to the second electrode is smaller than the area of crossing surfaces of the first and second electrodes which are opposed by crossing each other.