PROCESS FOR PRODUCING MAGNETORESISTIVE ELEMENT AND APPARATUS FOR PRODUCING MAGNETORESISTIVE ELEMENT

摘要

Disclosed is a process for producing a magnetoresistive element comprising a tunnel barrier forming step. The tunnel barrier forming step comprises a metal layer forming step of forming a metal layer to a first thickness, a plasma treatment step of performing plasma treatment, in which the metal layer is exposed to a plasma of an inert gas to etch the metal layer to a second thickness which is smaller than the first thickness, and an oxidizing step of oxidizing the metal layer subjected to the plasma treatment to form a metal oxide that constitutes a tunnel barrier.