发明名称 |
FLASH LAMP ANNEALING CRYSTALLIZATION FOR LARGE AREA THIN FILMS |
摘要 |
<p>The disclosed subject matter generally relates a method of irradiating a large area thin film with a pulsed light source. In some embodiments, the disclosed subject matter particularly relates to utilizing flash lamp annealing in combination with patterning techniques for making thin film devices. The flash lamp annealing can trigger lateral growth crystallization or explosive crystallization in large area thin films. In some embodiments, capping layers or proximity masks can be used in conjunction with the flash lamp annealing.</p> |
申请公布号 |
WO2009111340(A2) |
申请公布日期 |
2009.09.11 |
申请号 |
WO2009US35566 |
申请日期 |
2009.02.27 |
申请人 |
IM, JAMES, S.;THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK |
发明人 |
IM, JAMES, S. |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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