NITRIDE SEMICONDUCTOR CRYSTAL AND MANUFACTURING METHOD THEREOF

摘要

Provided is a method for efficiently manufacturing platelike nitride semiconductor crystals having the desired principal plane with a simple method. The ratio (L/W) of length (L) in the long direction of the projection plane, in which the crystal growth plane on a seed crystal is projected in the direction of growth, to the maximum width (W) is 2-400. For seed crystals wherein said maximum width (W) is 5 mm or less, platelike nitride semiconductor crystals are grown on said seed crystals by supplying a starting material gas.