SEMICONDUCTOR DEVUCE AND MANUFACTURING METHOD THEREOF

摘要

A structure for reducing resistance of a source, a drain and a gate, and a manufacturing method of an SGT in which a desired length of the gate, shapes of the source and drain, and diameter of a column-like semiconductor layer are provided. The manufacturing method of a semiconductor device comprises a step of forming a first column-like conductive type semiconductor layer, a step of forming a second conductive type semiconductor layer at a lower part of the first column-like conductivity type semiconductor layer, a step of forming a gate insulating film and a gate electrode around the first column-like conductive type semiconductor layer, astep of forming an insulating film on the upper part of the gate and also on the side wall of the first column-like conductive type semiconductor layer, a step of forming an insulating layer on the side wall of the gate, a step of forming the second conductive type semiconductor layer on the upper part of the first column-like conductive type semiconductor layer, and a step of forming a compound of metal and semiconductor in the gate and the second conductive type semiconductor layer formed on the upper and lower parts of the first column-like conductive type semiconductor layer.