发明名称 COMPOUND FOR PHOTORESIST, PHOTORESIST SOLUTION, AND ETCHING METHOD USING THE PHOTORESIST SOLUTION
摘要 <P>PROBLEM TO BE SOLVED: To provide a new compound for photoresist, which is used to perform microfabrication by photolithography, a photoresist solution using the compound for photoresist, and to provide an etching method for etching a surface of interest by using the photoresist solution. <P>SOLUTION: The compound for photoresist is a compound represented by general formula (I), wherein R<SP>1</SP>and R<SP>2</SP>each independently represent a substituent having a Hammett's substituent constant &sigma;p in a range of 0.2-0.9; R<SP>3</SP>represents a hydrogen atom or a monovalent substituent; &Phi; represents a substituted or unsubstituted aryl group or an aromatic heterocyclic group; and two or more of R<SP>1</SP>, R<SP>2</SP>, R<SP>3</SP>and &Phi; may bond to each other to form a ring. The photoresist solution contains the compound for photoresist. The etching method is for etching a surface to be processed by using the photoresist solution. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009204985(A) 申请公布日期 2009.09.10
申请号 JP20080048330 申请日期 2008.02.28
申请人 FUJIFILM CORP 发明人 WATANABE TETSUYA;USAMI YOSHIHISA
分类号 G03F7/004;C09B23/00;G03F7/40;H01L21/027 主分类号 G03F7/004
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