| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing composition for polishing a tungsten film and an insulation film at a high selective rate while scarcely causing erosion. <P>SOLUTION: The polishing composition contains colloidal silicon dioxide having average primary particle size of 7-40 nm, malonic acid, hydroxide, iron nitrate and water. The malonic acid is added in the content of 10-100 g/L and the hydroxide is used for pH control. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
