APPARATUS AND METHOD FOR PROCESSING PLASMA

摘要

PROBLEM TO BE SOLVED: To improve the rate of operation in a plasma processing apparatus and maintain appropriate plasma processing capacity for a long period. SOLUTION: The plasma processing apparatus includes: a processing chamber which includes a substrate electrode 112 to place a substrate to be processed and a gas supply device 109 to supply a process gas at a specified flow rate; a vacuum discharge means 118 which can control pressure or gas density in the processing chamber and change gas discharging speed; and a mechanism 101 to generate plasma in the processing chamber. Thus, the density of a gas in the processing chamber is controlled uniform by the mechanism for measuring the density thereof based on the measured gas density. COPYRIGHT: (C)2009,JPO&INPIT