| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface emitting semiconductor laser having a structure capable of reducing scattering of light in a laser resonator, and to provide a method of manufacturing the surface emitting semiconductor laser. SOLUTION: The surface emitting semiconductor laser 11 includes a first DBR 13, an active layer 15, a p-type semiconductor spacer layer 17, a heavily doped p-type semiconductor mesa 19, a heavily doped n-type semiconductor layer 21 which forms a tunnel junction TJ with the heavily doped p-type semiconductor mesa 19 and is provided on the p-type semiconductor spacer layer 17 to cover an upper surface and side surfaces of the mesa, a first n-type semiconductor spacer layer 23 provided on the heavily doped n-type semiconductor layer 21, and a second DBR 25 provided on the first n-type semiconductor spacer layer 23. A step of a surface of the first n-type semiconductor spacer layer 23 results from the heavily doped p-type semiconductor mesa 19, so a curvature of an interface between the second DBR 25 and the first n-type semiconductor spacer layer 23 is small. Therefore, scattering of light in the laser resonator is reducible. COPYRIGHT: (C)2009,JPO&INPIT
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