| 摘要 |
PROBLEM TO BE SOLVED: To provide an HFET which achieves a low on resistance, normally off characteristics and suppression of current collapse simultaneously. SOLUTION: An HFET comprises a first semiconductor layer, a second semiconductor layer heterojunctioned onto the first semiconductor layer and capable of forming a first conductivity type two-dimensional carrier gas layer on the heterojunction interface, a third semiconductor layer formed on the second semiconductor layer and into which impurities are introduced, a source electrode 9 formed on the third semiconductor layer, and a drain electrode 10 formed on the third semiconductor layer separately from the source electrode. The HFET further comprises a fourth semiconductor layer formed insularly between the source electrode and the drain electrode on the third semiconductor layer and having a second conductivity type different from the first conductivity type, and a gate electrode 8 connected electrically with the fourth semiconductor layer. COPYRIGHT: (C)2009,JPO&INPIT
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