发明名称 |
COMPOUND FOR PHOTORESIST, PHOTORESIST SOLUTION, AND ETCHING METHOD USING THE PHOTORESIST SOLUTION |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a new compound for photoresist, which is used to perform microfabrication by photolithography, a photoresist solution using the compound for photoresist, and to provide an etching method for etching a surface of interest by using the photoresist solution. <P>SOLUTION: The compound for photoresist is an azo compound or a complex compound of the azo compound with a metal ion. The photoresist solution contains the compound for photoresist. The etching method is for etching a surface to be processed by using the photoresist solution. <P>COPYRIGHT: (C)2009,JPO&INPIT |
申请公布号 |
JP2009204889(A) |
申请公布日期 |
2009.09.10 |
申请号 |
JP20080047238 |
申请日期 |
2008.02.28 |
申请人 |
FUJIFILM CORP |
发明人 |
WATANABE TETSUYA;USAMI YOSHIHISA |
分类号 |
G03F7/004;C09B29/09;C09B29/33;C09B29/36;C09B29/42;C09B29/46;C09B45/18;C09B45/20;C09B45/22;G03F7/40;H01L21/027 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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