发明名称 COMPOUND FOR PHOTORESIST, PHOTORESIST SOLUTION, AND ETCHING METHOD USING THE PHOTORESIST SOLUTION
摘要 <P>PROBLEM TO BE SOLVED: To provide a new compound for photoresist, which is used to perform microfabrication by photolithography, a photoresist solution using the compound for photoresist, and to provide an etching method for etching a surface of interest by using the photoresist solution. <P>SOLUTION: The compound for photoresist is an azo compound or a complex compound of the azo compound with a metal ion. The photoresist solution contains the compound for photoresist. The etching method is for etching a surface to be processed by using the photoresist solution. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009204889(A) 申请公布日期 2009.09.10
申请号 JP20080047238 申请日期 2008.02.28
申请人 FUJIFILM CORP 发明人 WATANABE TETSUYA;USAMI YOSHIHISA
分类号 G03F7/004;C09B29/09;C09B29/33;C09B29/36;C09B29/42;C09B29/46;C09B45/18;C09B45/20;C09B45/22;G03F7/40;H01L21/027 主分类号 G03F7/004
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