| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting element that maintains excellent light emission efficiency (external quantum efficiency) even under a large current density condition. <P>SOLUTION: The nitride semiconductor light emitting element includes a plurality of nitride semiconductor layers parallel to a nonpolar A plane. The nitride semiconductor light emitting element includes one or more n-type nitride semiconductor layers, a nitride semiconductor active layer (113), one or more p-type nitride semiconductor layers (112, 111, 110a), and metal layers (107, 106) which are laminated in order, and the active layer includes one or more quantum well layers, the distance between the metal layer (107) and the quantum well layer closest thereto being 10 to 50 nm. <P>COPYRIGHT: (C)2009,JPO&INPIT |
