| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable non-volatile semiconductor storage device whose operation speed is improved. SOLUTION: The semiconductor storage device is provided with: a plurality of word lines having first insulating films 102, charge accumulation layers 103, second insulating films 104 comprising metal oxides and control gate electrodes 105 which are formed on a semiconductor substrate 101 by leaving prescribed intervals and sequentially laminated; a third insulating film 110 which covers sides of the word lines and a surface of the semiconductor substrate between the word lines and whose film thickness is not larger than 15 nm; a fourth insulating film 111 formed between the control gate electrodes 105 of the adjacent word lines; and a hollow part 112 which is surrounded by the third insulating film 110 and the fourth insulating film 111 and is positioned between the charge accumulation layers 103 of the adjacent word lines. COPYRIGHT: (C)2009,JPO&INPIT
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