发明名称 |
MONOMER, RESIST COMPOSITION, AND PATTERNING PROCESS |
摘要 |
A pattern is formed by applying a positive resist composition comprising a polymer comprising hydroxyalkylnaphthalene-bearing recurring units and acid labile group-bearing recurring units onto a substrate to form a resist film, heat treating and exposing the resist film to radiation, heat treating and developing the resist film with a developer to form a first pattern, and causing the resist film to crosslink and cure with the aid of heat or of acid and heat. A second pattern is then formed in the space area of the first pattern. The double patterning process reduces the pitch between patterns to one half.
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申请公布号 |
US2009226843(A1) |
申请公布日期 |
2009.09.10 |
申请号 |
US20090398483 |
申请日期 |
2009.03.05 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
HATAKEYAMA JUN;KINSHO TAKESHI;OHASHI MASAKI;KATAYAMA KAZUHIRO |
分类号 |
G03F7/20;C08F120/10;G03F7/004 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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