发明名称 METHOD FOR MELTING NITRIDE, METHOD FOR SEPARATING ELEMENT OF NITRIDE, METHOD FOR FORMING ALLOY, AND METHOD FOR COLLECTING ELEMENT OF NITRIDE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method for separating an element constituting nitride, forming another alloy containing the separated element, and collecting and reusing the separated element, by melting the nitride at a lower temperature than the melting point thereof. <P>SOLUTION: The method for melting the nitride includes: preparing a solid nitride comprising nitrogen and another element, for instance, an AlN crystal; subsequently preparing a melt of an elemental metal or a mixture of metals having smaller electronegativity than that of the element in the nitride, for instance, a mixed melt of (Na-Li); and charging the nitride into the melt and heating the melt to melt the nitride, for instance, charging the AlN crystal into the mixed melt of (Na-Li) to melt it. Thereby, the AlN crystal has been melted into the melt at 870°C though the melting point of the AlN crystal is 2,000°C or higher. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009203529(A) 申请公布日期 2009.09.10
申请号 JP20080047599 申请日期 2008.02.28
申请人 NGK INSULATORS LTD 发明人 YAMAMURA YOSHIHIKO;YOSHIDA MANABU;YAMADA NAOHITO
分类号 C22B5/04;C22B21/02;C22B21/04;C22B58/00 主分类号 C22B5/04
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