| 摘要 |
A method of manufacturing a silicon substrate includes: growing a silicon single crystal having a carbon concentration in the range of 1.0x1016 atoms/cm3 to 1.6x1017 atoms/cm3 and an initial oxygen concentration in the range of 1.4x1018 atoms/cm3 to 1.6x1018 atoms/cm3 using a CZ method; slicing the silicon single crystal; forming an epitaxial layer on the sliced silicon single crystal; and performing a heat treatment thereon as a post-annealing process at a temperature in the range of 600° C. to 850° C.
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