发明名称 FLASH MEMORY DEVICE AND PROGRAM METHOD THEREOF
摘要 A flash memory device that includes a voltage generator circuit configured to generate a program voltage, a pass voltage, and a high voltage; a plurality of planes configured to perform a program operation in response to the program, pass, and high voltages and to verify the program operation, respectively; and control logic configured to control the planes in response to verification results from the planes, wherein the control logic controls the planes so as to interrupt the program and pass voltages or the high voltage from being applied to program-passed planes.
申请公布号 US2009225600(A1) 申请公布日期 2009.09.10
申请号 US20080100490 申请日期 2008.04.10
申请人 PARK JIN-SUNG 发明人 PARK JIN-SUNG
分类号 G11C16/04;G11C7/00;G11C16/06 主分类号 G11C16/04
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