发明名称 |
SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME, AND EPITAXIAL WAFER |
摘要 |
A semiconductor light emitting device includes: an upper growth layer including a light emitting layer; a transparent substrate through which a radiant light from the light emitting layer passes; and a foundation layer provided between the upper growth layer and the transparent substrate, the foundation layer having a surface-controlling layer and a bonding layer bonded with the transparent substrate. The surface-controlling layer is made of compound semiconductor including at least Ga and As. The upper growth layer is formed on an upper surface of the surface-controlling layer. A lattice constant difference at an interface between the surface-controlling layer and the upper growth layer is smaller than that at an interface between the bonding layer and the transparent substrate.
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申请公布号 |
US2009224269(A1) |
申请公布日期 |
2009.09.10 |
申请号 |
US20090391283 |
申请日期 |
2009.02.24 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SAEKI RYO;KONDO KATSUFUMI;IDEI YASUO |
分类号 |
H01L21/20;H01L29/20;H01L33/00 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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地址 |
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