发明名称 |
Reprogrammable Nonvolatile Memory Devices and Methods |
摘要 |
A nonvolatile memory device includes a command decoder configured to generate a read/write flag signal in response to a read/write command and to generate a reprogram flag signal in response to a reprogram command, and a read/write circuit configured to control reading and writing operations in a memory cell array. The device further includes a read/write controller configured to cause the read/write circuit to perform a reading/writing operation in response to the read/write flag signal provided from the command decoder, and a reprogram controller configured to cause the read/write controller to perform a reprogramming operation in response to the reprogram flag signal. Methods of reprogramming a memory device include determining whether the memory device is in a busy state, delaying a reprogramming operation if the memory device is in a busy state, and executing the reprogramming operation when the memory device has turned to a standby state from the busy state.
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申请公布号 |
US2009225603(A1) |
申请公布日期 |
2009.09.10 |
申请号 |
US20090466679 |
申请日期 |
2009.05.15 |
申请人 |
CHUN JIN-YOUNG;JEONG JAE-YONG |
发明人 |
CHUN JIN-YOUNG;JEONG JAE-YONG |
分类号 |
G11C16/04;G11C7/00;G11C8/10 |
主分类号 |
G11C16/04 |
代理机构 |
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