| 摘要 |
<p>A cover part, processing gas diffusing and a supplying unit, and a substrate processing apparatus are provided to secure uniformity of plasma process on the substrate by increasing conductance and supplying the processing gas uniformly. In a cover part, processing gas diffusing and a supplying unit, and a substrate processing apparatus, a process chamber(11) accommodates a substrate(W). A processing gas supplying unit supplies the process gas within a corresponding process chamber, and a processing gas induction pipe(40) introduces the process gas to the processing gas supplying unit. A plurality of vents(42) are penetrated through internal space and a processing chamber.</p> |
