METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method of manufacturing a semiconductor device is provided to prevent falling of pillar active pattern due to an SOD film by etching a part of SOD film and forming a linear oxide film supporting on SOD(Spin-On Dielectric) film. In a method of manufacturing a semiconductor device, a semiconductor substrate(200) is etched and a pillar type active pattern(P1) is formed. A bit line(212) is formed within the semiconductor substrate between the pillar type active pattern. The insulating layer(206) is formed in order to cover the bit line and pillar type active pattern, and a first etching for forming a trench on the insulating layer at the top of the bit line. A liner insulating layer(218) is formed on the insulating layer in which the first etching is performed.