发明名称 SUBSTRATE HEATING APPARATUS, PROCESSING METHOD AND SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a substrate heating apparatus maintaining a pressure inside a conductive heater at &le;1.0&times;10<SP>-2</SP>Pa as a predetermined value for a long time even in a high-temperature processing having a temperature of &ge;2,000&deg;C. <P>SOLUTION: The substrate heating device accelerates thermoelectrons generated in a filament 132 in a vacuum heating container 103 to allow the thermoelectrons to collide against a conductive heater 131 forming one surface of the vacuum heating container 103, thereby generating heat, wherein the conductive heater 131 is made of carbon and at least either the inner surface or the outer surface of the conductive heater 131 is covered with tantalum carbide (TaC). <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009206441(A) 申请公布日期 2009.09.10
申请号 JP20080049914 申请日期 2008.02.29
申请人 CANON ANELVA ENGINEERING CORP 发明人 SHIBAGAKI MASAHATA
分类号 H01L21/324;C04B41/87;C23C14/48;C23C14/50;C23C14/58 主分类号 H01L21/324
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