发明名称 DEVICE, CIRCUIT AND METHOD OF REDUCING LEAKAGE CURRENT
摘要 PROBLEM TO BE SOLVED: To reduce a leakage current between a source and a drain in order to solve a problem that, when a size of a transistor is miniaturized, a length of a channel region of the transistor becomes short, thereby control of current in the channel region becomes difficult and a leakage current from the channel region of the transistor increases. SOLUTION: By applying the channel region a voltage that is a reverse bias to a source region of the transistor, the leakage current from the channel region is reduced. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009207178(A) 申请公布日期 2009.09.10
申请号 JP20090137804 申请日期 2009.06.09
申请人 INTEL CORP 发明人 VELARDE KIMBERLEY;CLARK LAWRENCE
分类号 H01L27/04;H03K19/094;H01L21/822;H01L21/8238;H01L27/092;H03K19/00;H03K19/0948 主分类号 H01L27/04
代理机构 代理人
主权项
地址