| 摘要 |
PROBLEM TO BE SOLVED: To form a more uniform film on a larger substrate by using a horizontal type thin-film-forming apparatus which grows an atomic layer on a substrate by supplying gas in parallel with the substrate, without complicating a gas supply mechanism. SOLUTION: When introducing the gas from a gas-supplying part 107a, this thin-film-forming apparatus is set at a state that the gas is exhausted from an exhaust part 108 of a film-forming chamber, a valve 110a is closed and a valve 110b is opened. Accordingly, the gas introduced from the gas-supplying part 107a flows over a substrate (W) which is mounted on a substrate-mounting table 105, toward an exhaust port 108b. On the contrary, when introducing the gas from a gas-supplying part 107b, the thin-film forming apparatus is set at a state that the gas is exhausted from the exhaust part 108 of a film-forming chamber, a valve 110b is closed and a valve 110a is opened. Accordingly, the gas introduced from the gas-supplying part 107b flows over the substrate (W) which is mounted on the substrate-mounting table 105, toward an exhaust port 108a. COPYRIGHT: (C)2009,JPO&INPIT
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