ATOMIC LAYER EPITAXY APPARATUS

摘要

PROBLEM TO BE SOLVED: To prevent a partial degradation in the film properties in a wafer face of a film formed by an atomic layer epitaxy process. SOLUTION: An atomic layer epitaxy apparatus 100 includes: a metal raw material gas feed tube 110 arranged at the lateral of a wafer 200 so as to spread over the whole face of the wafer 200 and fed with raw material gas from one end 110a in a direction toward the other end 110b; and a working gas feed tube 120 arranged at the lateral of the wafer 200 so as to spread over the whole face of the wafer 200 and fed with working gas from one end 120a in a direction toward the other end 120b. The working gas feed tube 120 is provided with a plurality of gas blow-off holes 122 jetting the working gas to be worked on the wafer 200, and the gas blow-off holes 122 are arranged so as to be gradually dense as it goes from one end 120a to the other end 120b in the working gas feed tube 120. COPYRIGHT: (C)2009,JPO&INPIT