发明名称 Method and Apparatus for Preventing Galvanic Corrosion in Semiconductor Processing
摘要 The present invention is related to a method and apparatus for cleaning a semiconductor substrate including on a surface of the substrate at least one structure comprising a first conducting or semiconducting material, surrounded by a layer of a second conducting or semiconducting material, said layer essentially extending over the totality of said surface, the first and second material being in physical contact, the method comprising the steps of: providing the substrate, positioning a counter-electrode facing the substrate surface, and supplying an electrolytic fluid to the space between the surface and the electrode, the counter-electrode acting as an anode in the galvanic cell defined by the substrate surface, the cleaning fluid and the counter-electrode.
申请公布号 US2009223832(A1) 申请公布日期 2009.09.10
申请号 US20090350095 申请日期 2009.01.07
申请人 INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW (IMEC);KATHOLIEKE UNIVERSITEIT LEUVEN, K.U.LEUVEN R&D 发明人 GARAUD SYLVAIN;VOS RITA;LEUNISSEN LEONARDUS;MERTENS PAUL
分类号 C25F1/00;C25F7/00 主分类号 C25F1/00
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