| 发明名称 |
Semiconductor Device and Method for Manufacturing the Same |
| 摘要 |
An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film between the semiconductor layer of the TFT and a substrate, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of N to the concentration of Si.
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| 申请公布号 |
US2009224260(A1) |
申请公布日期 |
2009.09.10 |
| 申请号 |
US20090399573 |
申请日期 |
2009.03.06 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
HAYAKAWA MASAHIKO;SAKAMA MITSUNORI;TORIUMI SATOSHI |
| 分类号 |
H01L33/00;H01L21/00;H01L21/20;H01L21/77;H01L27/01;H01L27/12;H01L29/06;H01L29/786;H01L31/0392 |
主分类号 |
H01L33/00 |
| 代理机构 |
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