| 摘要 |
An isolation layer of a semiconductor device and a method of manufacturing the same are provided to prevent the decrease of channel width while securing the space of an element isolation film by forming a second trench with a second width smaller than a first width of a first trench. In an isolation layer of a semiconductor device and a method of manufacturing the same, a semiconductor substrate(102) includes a second trench(T2) having a second trench smaller than the first width in the first trench(T1). A first insulating layer(110) is buried within the first trench, and a second insulating layer(112) is buried within the second trench. A first insulating layer is made of a minute insulating layer, and a second insulating layer is made of a liquid dielectric.
|
