SUBSTRATE TREATMENT APPARATUS, AND SUBSTRATE SUPPORT TO BE USED FOR THE APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus that performs an excellent etching treatment on a major surface of a substrate while preventing or suppressing stagnation of an etching liquid on the major surface of the substrate, and to provide a substrate support that prevents or suppresses the stagnation of the etching liquid on the major surface of the substrate.

SOLUTION: The substrate treatment apparatus 1 includes the substrate support 3 and a spin chuck 4 which rotates a wafer W and the substrate support 3. On an upper surface of the substrate support 3, a cylindrical storage recess 13 and a flat first annular surface 12 are formed. The first annular surface 12 is disposed closely to an upper surface of the wafer W held in the storage recess 13 so that nitrohydrofluoric acid on the first annular surface 12 and nitrohydrofluoric acid on the upper surface of the wafer W may form a continuous liquid film. The first annular surface 12 is subjected to sand blast processing (lyophilic processing).

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