| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light receiving element that improves the stability of wavelength. <P>SOLUTION: An n-type InP substrate 11 (semiconductor substrate) includes a lower surface (first main surface) and an upper surface (second main surface) facing each other. An n-type multilayer reflection layer 12 (first reflection layer), an absorption layer 13, a p-type phase adjustment layer 14, and an anode layer 15 (second reflection layer) are formed on the lower surface of the n-type InP substrate 11 in this order from the side of the n-type InP substrate 11. A reflection preventive film 17 is formed on the upper surface of the n-type InP substrate 11. The n-type multilayer reflection layer 12 is a multilayer reflection layer formed of laminated semiconductor layers with different refractive indices. The absorption layer 13 has a smaller band gap than the n-type InP substrate 11. The p-type phase adjustment layer 14 has a larger band gap than the absorption layer 13. The n-type multilayer reflection layer 12 and the absorption layer 13 are in contact with each other without some layer interposed therebetween. <P>COPYRIGHT: (C)2009,JPO&INPIT |
