POLISHING SOLUTION FOR METAL AND CHEMICAL MECHANICAL POLISHING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a polishing solution for a metal which can polish a semiconductor wafer at a high rate and with low dishing, and to provide a chemical mechanical polishing (CMP) method using the same.

SOLUTION: The polishing solution for the metal is used for CMP in a step of manufacturing the semiconductor device and includes: a compound represented by a general formula (1), an oxidizer, and an organic acid. In the general formula (1), Q is N or CR5; Z is H, halogen, an aliphatic hydrocarbon group, an aryl group, a heterocycle group, a carboxyl group, a carbamoyl group, an acylamino group, an amino group, or a cyano group; R1and R2are independently the H, the aliphatic hydrocarbon group, the aryl group, or the heterocycle group; R3and R4are independently the H; an alkyl group containing the carboxyl group, an alkyl group containing a hydroxyl group, an alkyl group containing a tertiary amino group, or the alkyl group; and R5is the H, the halogen, the aliphatic hydrocarbon group, the aryl group, the heterocycle group, the carboxyl group, the carbamoyl group, the acylamino group, or the amino group. Moreover, R1and R2, and R3and R4may be joined to form a ring.

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