| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which has a Low-k film as an interlayer insulating film, the semiconductor device having superior reliability by preventing the interlayer insulating film from peeling in a temperature cycle test. <P>SOLUTION: In the semiconductor device having a stack structure of interlayer insulating films 4, 7 and 10 in which buried wiring lines 5, 8 and 11 having principal conductive layers of copper are formed inside, and cap insulating films 6, 9 and 12 for the buried wiring lines 5, 8 and 11, the cap insulating film 6 which contacts, on the upper surface, the interlayer insulating film 7 formed of the Low-k film having a relatively small Young's modulus and has a relatively large Young's modulus is formed not to be installed at an end of the semiconductor device. <P>COPYRIGHT: (C)2009,JPO&INPIT |
