发明名称 Organic Luminescence Transistor Device and Manufacturing Method Thereof
摘要 The invention is an organic luminescence transistor device including: a substrate; a first electrode layer provided on a side of an upper surface of the substrate; a layered structure provided locally on a side of an upper surface of the first electrode layer, the layered structure covering an area of a predetermined size in a plan view, the layered structure including an insulation layer, an assistance electrode layer and an electric-charge-injection inhibiting layer in this order; an organic EL layer provided on the side of an upper surface of the first electrode layer at least at an area not provided with the layered structure; and a second electrode layer provided on a side of an upper surface of the organic EL layer.
申请公布号 US2009224233(A1) 申请公布日期 2009.09.10
申请号 US20070223263 申请日期 2007.01.26
申请人 DAI NIPPON PRINTING CO., LTD.;PIONEER CORPORATION;NEC CORPORATION 发明人 OBATA KATSUNARI;HANDA SHINICHI;HATA TAKUYA;NAKAMURA KENJI;YOSHIZAWA ATSUSHI;ENDO HIROYUKI
分类号 H01L51/30;G09F9/30;H01L21/28;H01L27/32;H01L51/50;H05B33/10;H05B33/22;H05B33/26 主分类号 H01L51/30
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