发明名称 |
Organic Luminescence Transistor Device and Manufacturing Method Thereof |
摘要 |
The invention is an organic luminescence transistor device including: a substrate; a first electrode layer provided on a side of an upper surface of the substrate; a layered structure provided locally on a side of an upper surface of the first electrode layer, the layered structure covering an area of a predetermined size in a plan view, the layered structure including an insulation layer, an assistance electrode layer and an electric-charge-injection inhibiting layer in this order; an organic EL layer provided on the side of an upper surface of the first electrode layer at least at an area not provided with the layered structure; and a second electrode layer provided on a side of an upper surface of the organic EL layer.
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申请公布号 |
US2009224233(A1) |
申请公布日期 |
2009.09.10 |
申请号 |
US20070223263 |
申请日期 |
2007.01.26 |
申请人 |
DAI NIPPON PRINTING CO., LTD.;PIONEER CORPORATION;NEC CORPORATION |
发明人 |
OBATA KATSUNARI;HANDA SHINICHI;HATA TAKUYA;NAKAMURA KENJI;YOSHIZAWA ATSUSHI;ENDO HIROYUKI |
分类号 |
H01L51/30;G09F9/30;H01L21/28;H01L27/32;H01L51/50;H05B33/10;H05B33/22;H05B33/26 |
主分类号 |
H01L51/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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