发明名称 |
NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY APPARATUS, NONVOLATILE SEMICONDUCTOR APPARATUS, AND METHOD OF MANUFACTURING NONVOLATILE MEMORY ELEMENT |
摘要 |
A nonvolatile memory element of the present invention comprises a first electrode (103), a second electrode (105), and a resistance variable layer (104) disposed between the first electrode (103) and the second electrode (104), a resistance value of the resistance variable layer varying reversibly according to an electric signal applied between the electrodes (103),(105), and the resistance variable layer (104) comprises at least a tantalum oxide, and is configured to satisfy 0<x<2.5 when the tantalum oxide is represented by TaOx.
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申请公布号 |
US2009224224(A1) |
申请公布日期 |
2009.09.10 |
申请号 |
US20070307032 |
申请日期 |
2007.10.24 |
申请人 |
FUJII SATORU;TAKAGI TAKESHI;MURAOKA SHUNSAKU;OSANO KOICHI;SHIMAKAWA KAZUHIKO |
发明人 |
FUJII SATORU;TAKAGI TAKESHI;MURAOKA SHUNSAKU;OSANO KOICHI;SHIMAKAWA KAZUHIKO |
分类号 |
H01L47/00;H01L21/00 |
主分类号 |
H01L47/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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