| 摘要 |
A patterning method comprises a step for forming a first film on a substrate, a step for forming a first resist film on the first film, a step for processing the first resist film into a first resist pattern having a predetermined pitch by photolithography, a step for forming an silicon oxide film on the first resist pattern and the first film by supplying a first gas containing an organic silicon and a second gas containing an activated oxygen species alternately to the substrate, a step for forming a second resist film on the silicon oxide film, a step for processing the second resist film into a second resist pattern having a predetermined pitch by photolithography, and a step for processing the first film by using the first and second resist patterns as a mask. |
