| 摘要 |
A semiconductor device and a method for manufacturing the same are provided to facilitate patterning by forming a storage node contact mask as an island type instead of a line type. In a semiconductor device and a method for manufacturing the same, a semiconductor substrate(100) has a plurality of storage node contact areas. A first insulating layer(140) includes a groove(T) in which a part of it corresponding to each storage node contact area is perpendicularly penetrated. A second insulating layer(160) is arranged in the upper region of each groove. A conductive film(170) is formed so that the each groove is filled in, and a first insulating layer is made of the oxide film.
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